Electronic device for managing degree of degradation

ABSTRACT

An electronic device including a processor and a sensor may be provided. The processor obtains a first degree of degradation of a first core based on a first parameter value associated with a lifetime of the first core and a first operating level associated with an operation of the first core. The processor obtains a second degree of degradation of a second core based on a second parameter value associated with a lifetime of the second core and a second operating level associated with an operation of the second core. The processor schedules a task of the first core and the second core based on the first degree of degradation and the second degree of degradation. The sensor provides the first parameter value and the first operating level to the first core and the second parameter value and the second operating level to the second core.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2018-0130071 filed on Oct. 29, 2018, in the KoreanIntellectual Property Office, the disclosure of which is incorporated byreference herein in its entireties.

BACKGROUND

Example embodiments of the inventive concepts described herein relate toelectronic devices, and more particularly, relate to electronic devicesconfigured to manage a degree of degradation.

An electronic device is being included within various things asinformation communication technologies develop. For example, variousvehicles used as a means of transportation include electronic devicesfor various purposes. For example, a vehicle includes electronic devicesfor controlling machines constituting the vehicle for passenger safety,autonomous driving, and/or prevention of environment pollution.

Electronic devices may be implemented with various semiconductor chips.A lifetime of a semiconductor chip is limited because the semiconductorchip degrades due to the use. For example, the semiconductor chip mayinclude semiconductor elements including an insulating layer such as anoxide layer. In the case where a voltage is continuously applied to theinsulating layer for an operation of the semiconductor chip, theinsulating layer may be gradually damaged. As such, the performance andlifetime of the semiconductor chip may be reduced.

Because a warranty period of a vehicle tends to be longer than that ofan electronic device such as a mobile device, the electronic device usedin the vehicle is desired to have a lifetime corresponding to the longwarranty period. Accordingly, a technology for increasing the lifetimeof the semiconductor chip is desired.

SUMMARY

Some example embodiments of the inventive concepts provide electronicdevices configured to calculate a degree of degradation to manage thedegree of degradation of a semiconductor chip, and/or to perform variousoperations based on the degree of degradation thus calculated.

According to an example embodiment, an electronic device may include aprocessor and a sensor. The processor may be configured to obtain afirst degree of degradation of a first core based on a first parametervalue and a first operating level, the first parameter value beingassociated with a first lifetime of the first core, the first operatinglevel being associated with a first operation of the first core, obtaina second degree of degradation of a second core based on a secondparameter value and a second operating level, the second parameter valuebeing associated with a second lifetime of the second core, the secondoperating level being associated with a second operation of the secondcore, and schedule a task with respect to the first core and the secondcore based on the first degree of degradation and the second degree ofdegradation. The sensor may be configured to provide the first parametervalue and the first operating level to the first core, and the secondparameter value and the second operating level to the second core. Thefirst operating level may be a first minimum level of a first operatingvoltage for operating the first core with a first reference performance,and the second operating level may be a second minimum level of a secondoperating voltage for operating the second core with a second referenceperformance.

According to an example embodiment, an electronic device may include aprocessor, a voltage generator, and a sensor. The processor may beconfigured to determine an operating level and a target core based on aparameter value associated with a lifetime, the operating level beingassociated with a reference performance, the target core being oneselected among a plurality of cores included in the processor and towhich a task is to be assigned. The voltage generator may be configuredto supply an operating voltage to the processor. The sensor may beconfigured to obtain the parameter value, measure the operating level ofthe operating voltage supplied to the processor, and provide theoperating level to the processor. The operating level may be a minimumlevel of the operating voltage for operating the processor with thereference performance.

According to an example embodiment, an electronic device may include acontrol circuit and a sensor. The control circuit may be configured toobtain a degree of degradation of a semiconductor chip based on aparameter value and an operating level, the parameter value beingassociated with a lifetime of the semiconductor chip, the operatinglevel being associated with a reference performance of the semiconductorchip, control the semiconductor chip to perform a first operation, andstarts a second operation of the semiconductor chip, which has beencontrolled to perform the first operation, based on the obtained degreeof degradation. The sensor may be configured to provide the parametervalue and the operating level to the semiconductor chip. The operatinglevel may be a minimum level of an operating voltage for operating thesemiconductor chip with the reference performance.

BRIEF DESCRIPTION OF THE FIGURES

The above and other objects and features of the inventive concepts willbecome apparent by describing in detail example embodiments thereof withreference to the accompanying drawings.

FIG. 1 is a block diagram illustrating an electronic device according toan example embodiment of the inventive concepts.

FIG. 2 is a block diagram illustrating a processor configured to managethe degree of degradation of each core, according to an exampleembodiment of the inventive concepts.

FIG. 3 is a block diagram illustrating an example configuration of asensor of FIG. 2.

FIG. 4 is a flowchart illustrating example operations of a processor ofFIG. 2.

FIG. 5 is a flowchart illustrating example operations included in eachoperation of FIG. 4.

FIG. 6 is a diagram illustrating graphs associated with an examplemethod for measuring minimum operating levels of cores of FIG. 2.

FIGS. 7 and 8 are graphs illustrating minimum operating levels measuredby operations of FIG. 6.

FIG. 9 is a diagram illustrating graphs for describing the degree ofdegradation of each core of FIG. 2.

FIGS. 10 and 11 are conceptual diagrams illustrating example operationsfor assigning tasks to cores of FIG. 2.

FIG. 12 is a diagram illustrating a lifetime of a processor configuredto perform operations of FIGS. 9 to 11 and a lifetime of a processor notconfigured to perform operations of FIGS. 9 to 11.

FIG. 13 is a block diagram illustrating an electronic device configuredto manage the degree of degradation of storage, according to an exampleembodiment of the inventive concepts.

FIG. 14 is a conceptual diagram illustrating a vehicle including anelectronic device of FIG. 1.

DETAILED DESCRIPTION

Below, some example embodiments of the inventive concepts may bedescribed in detail and clearly to such an extent that an ordinary onein the art easily implements the inventive concepts.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Expressions such as “atleast one of,” when preceding a list of elements, modify the entire listof elements and do not modify the individual elements of the list. Thus,for example, both “at least one of A, B, or C” and “A, B, and/or C”means either A, B, C or any combination thereof. In other words,expressions such as “at least one of,” when preceding a list ofelements, modify the entire list of elements and do not modify theindividual elements of the list.)

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of example embodiments.

FIG. 1 is a block diagram illustrating an electronic device according toan example embodiment of the inventive concepts.

Referring to FIG. 1, an electronic device 100 may include a degradationmanaging block or degradation managing circuitry 110, a processor 121, amemory 122, storage 123, a communication device or a communicationcircuitry 124, a user interface 125, and a bus 126. For example, theelectronic device 100 may be one of a personal computer (PC), aworkstation, a notebook computer, a mobile device, an electric vehicle,etc. The electronic device 100 may further include at least onecomponent not illustrated in FIG. 1. In some example embodiments, theelectronic device 100 may not include one or more of the componentsillustrated in FIG. 1.

For example, each component may be implemented with a semiconductorchip. As a semiconductor chip operates, a performance of semiconductorelements constituting the semiconductor chip may be reduced. Forexample, as semiconductor elements are used for an operation of theelectronic device 100, bias temperature instability (BTI), timedependent dielectric breakdown (TDDB), and/or hot-carrier injection(HCI) may occur, and thus, the performance and lifetime of thesemiconductor chip may be reduced. For example, in the semiconductorchip, a level of a threshold voltage of a transistor may increase due toa breakdown of an oxide layer of the transistor, and a minimum level ofa voltage for operating the semiconductor chip (hereinafter referred toas a “minimum operating level LVcc”) may increase.

In the present disclosure, that a semiconductor chip “operates normally”means that the semiconductor chip operates with a performance satisfyinguser requirements and the intention of the designer (hereinafterreferred to as a “reference performance”). For example, the referenceperformance may be determined in consideration of a lifetime and anoperating speed of a semiconductor chip. In the present disclosure, thata semiconductor chip “does not operates normally” means that thesemiconductor chip operates with a performance lower than the referenceperformance or does not operate.

Accordingly, semiconductor chips may operate with the referenceperformance based on an operating voltage having a level that is notless than the minimum operating level. For example, that a core operatesnormally may mean that the core operates at an operating speed that isnot lower than an operating speed intended by the designer. In thepresent disclosure, a “lifetime” of a semiconductor chip means a timelength during which the semiconductor chip is capable of operating witha performance equal to or greater than the reference performance. Asemiconductor chip may operate normally during a lifetime, and may notoperate normally after the lifetime.

The degree of degradation means the degree to which a performance of asemiconductor chip is reduced. In the case where the degree ofdegradation of a semiconductor chip increases, the minimum operatinglevel of the semiconductor chip may increase. Thus, the degree ofdegradation may correspond to an increment of the minimum operatinglevel. For example, as the processor 121 operates, minimum operatinglevels for operating cores included in the processor 121 may increase.As the storage 123 operates, levels of voltages (e.g., a program voltageand a pass voltage) for operating the storage 123 may increase. Below,in the present disclosure, the degree of degradation may be associatedwith an increment of the minimum operating level. That is, that thedegree of degradation of a particular semiconductor chip is high meansthat the minimum operating level of the semiconductor chip issignificantly increased.

The degradation managing circuitry 110 may manage the degree ofdegradation of each component included in the electronic device 100. Thedegradation managing circuitry 110 may obtain information associatedwith the degree of degradation and a lifetime of at least one of thecomponents (e.g., parameter values and a minimum operating levelassociated with the degree of degradation) from the at least onecomponent, and may calculate the degree of degradation based on theobtained information. Further, the degradation managing circuitry 110may perform various operations based on the degree of degradation thuscalculated. For example, the degradation managing circuitry 110 mayperform an operation for prolonging a lifetime of each component. Insome example embodiments, the degradation managing circuitry 110 mayperform an operation associated with reliability of each component.

The degradation managing circuitry 110 may include hardware circuits(e.g., an analog circuit and a logic circuit) configured to performoperations to be described in the present disclosure. In some exampleembodiments, all or a part of operations of the degradation managingcircuitry 110 may be implemented with a program code, and an instructionset of the program code may be executed by a processor (e.g., theprocessor 121).

The processor 121 may control overall operations of the electronicdevice 100. The processor 121 may process operations for operating theelectronic device 100 as a central control device. For example, theprocessor 121 may be one of a general-purpose processor, a workstationprocessor, an application processor, etc. To process operations, theprocessor 121 may include a single processor core (or a single core) ormay include a plurality of processor cores (or a multi-core). Forexample, the processor 121 may include a multi-core such as a dual-core,a quad-core, a hexa-core, or the like.

The processor 121 may execute software 10 for managing the degree ofdegradation of each component of the electronic device 100. For example,the software 10 may be an operating system for controlling operations ofthe electronic device 100 or an application program that is executed bya user. The processor 121 may perform operations the same orsubstantially similar to the operations of the degradation managingcircuitry 110 by executing the software 10.

The processor 121 may calculate the degree of degradation of each coreincluded in the processor 121. An example method for calculating thedegree of degradation of the processor 121 will be described withreference to FIGS. 4 and 5.

For example, the processor 121 may include a scheduler (not illustrated)configured to schedule tasks to be assigned to the cores of theprocessor 121. The scheduler may assign the tasks to the cores based onthe calculated degree of degradation of each core. Example operations ofthe scheduler for assigning the tasks to the cores will be describedwith reference to FIGS. 9 to 11.

The memory 122 may store data processed or to be processed by theprocessor 121. For example, the memory 122 may include a volatile memory(e.g., a static random access memory (SRAM), a dynamic (DRAM), or asynchronous DRAM (SDRAM)), or a nonvolatile memory (e.g., a flashmemory, a phase-change RAM (PRAM), a magneto-resistive RAM (MRAM), aresistive RAM (ReRAM), or a ferroelectric RAM (FRAM)). In some exampleembodiments, the memory 122 may include heterogeneous memories.

The storage 123 may store data regardless of whether a power issupplied. For example, the storage 123 may be a storage medium, whichincludes a nonvolatile memory, such as a hard disk drive (HDD), a solidstate drive (SSD), a secure digital (SD) card, or a universal serial bus(USB) memory device.

The memory 122 may include a memory array including memory cells forstoring data. The reliability of the memory cells may decrease due todegradation over time. The degree of degradation of the memory 122 andthe degree of degradation of the storage 123 may be managed byoperations of the degradation managing circuitry 110 or operations(operations according to the execution of the software 10) of theprocessor 121. Example operations of the processor 121 for managing thedegree of degradation of the memory 122 and the degree of degradation ofthe storage 123 will be described with reference to FIG. 13.

The communication circuitry 124 may include a transmission circuit and areception circuit. The electronic device 100 may communicate withanother electronic device through the communication circuitry 124 totransmit and/or receive data. The user interface 125 may convey acommand or an input/output of data between the user and the electronicdevice 100. The bus 126 may provide a communication path between thecomponents of the electronic device 100. For example, the processor 121,the memory 122, the storage 123, the communication circuitry 124, andthe user interface 125 may exchange data with each other through the bus126. The bus 126 may be configured to support various communicationformats used in the electronic device 100.

Below, operations of the processor 121 for managing the degree ofdegradation of each component of the electronic device 100 will bedescribed, but it may be well understood that operations the same orsubstantially similar to the operations of the processor 121 may beperformed by the degradation managing circuitry 110. Further, thepresent disclosure is not limited to descriptions below, and themanagement of the degree of degradation according to the presentdisclosure may be applied to any other semiconductor device in additionto the processor 121. For example, it may be well understood that themanagement of the degree of degradation according to the presentdisclosure may be adopted for the memory 122, the storage 123, or anyother device identically or substantially similar to the manners to bedescribed below.

FIG. 2 is a block diagram illustrating a processor configured to managethe degree of degradation of each core, according to an exampleembodiment of the inventive concepts.

Referring to FIG. 2, a processor 1000 may include a sensor (or sensorcircuit) 1100, a voltage generator 1200, and a core circuit (or coreblock) 1300. For example, the processor 1000 may correspond to theprocessor 121 of FIG. 1.

The core circuit 1300 may include a first core (or a first core portion)CORE 1 1310 and a second core (or a second core portion) CORE 2 1320.For better understanding, a description will be given as the processor1000 includes the two cores 1310 and 1320, but it may be well understoodthat the processor 1000 may include one core or three or more cores. Forbetter understanding, a description will be given as the sensor 1100 andthe voltage generator 1200 are positioned within the processor 1000, butit may be well understood that at least one of the sensor 1100 and/orthe voltage generator 1200 may be positioned outside the processor 1000.

The sensor 1100 may sense various factors having an influence on thedegree of degradation (or a lifetime) of the cores 1310 and 1320. Forexample, a temperature, an operating voltage, and an operating frequencyof the cores 1310 and 1320 may have an influence on the degree ofdegradation and lifetime of the core 1310 and the degree of degradationand lifetime of the core 1320. The sensor 1100 may sense a temperature,an operating voltage, and/or an operating frequency of the cores 1310and 1320.

The sensor 1100 may obtain parameter values indicating the sensedfactors. For example, the sensor 1100 may obtain a temperature value, alevel of an operating voltage, and/or an operating frequency value ofthe cores 1310 and 1320. The sensor 1100 may output a signal forproviding the obtained parameter values to the core circuit 1300.Example configurations and operations of the sensor 1100 will bedescribed with reference to FIG. 3.

The voltage generator 1200 may generate voltages for operating the cores1310 and 1320. The voltage generator 1200 may generate voltages havingdesired levels under control of the cores 1310 and 1320. For example,the voltage generator 1200 may generate a voltage having a level, whichdecreases in a stepwise form, under control of the cores 1310 and 1320.

The cores 1310 and 1320 may request the parameter values associated withthe degree of degradation and lifetime of the core 1310 and the degreeof degradation and lifetime of the core 1320 from the sensor 1100. Thecores 1310 and 1320 may obtain the parameter values from the signalreceived from the sensor 1100. The cores 1310 and 1320 may be suppliedwith a voltage from the voltage generator 1200. The cores 1310 and 1320may output a signal for controlling the voltage generator 1200 to thevoltage generator 1200. The cores 1310 and 1320 may control a level of avoltage, which is output from the voltage generator 1200, based on theobtained parameter values.

The cores 1310 and 1320 may perform various operations for increasingthe lifetimes of the cores 1310 and 1320 based on the degree ofdegradation of the core 1310 and the degree of degradation of the core1320. For example, the cores 1310 and 1320 may perform operations formanaging the degree of degradation of the cores 1310 and the degree ofdegradation of the core 1320. Example operations of the cores 1310 and1320 for managing the degree of degradation of the core 1310 and thedegree of degradation of the core 1320 will be described with referenceto FIGS. 4 and 5.

FIG. 3 is a block diagram illustrating an example configuration of asensor of FIG. 2.

The sensor 1100 may include sensors which sense factors associated withthe degree of degradation of the core 1310 and the degree of degradationof the core 1320 to obtain parameter values. In an example of FIG. 3,the sensor 1100 may include a voltage sensor 1110, a temperature sensor1120, and a frequency sensor 1130. To sense various factors having aninfluence on the degree of degradation of the cores 1310 and the degreeof degradation of the core 1320, the sensor 1100 may further include oneor more components not illustrated in FIG. 3, or may not include atleast one of the components illustrated in FIG. 3.

The voltage sensor 1110 may sense operating voltages of the cores 1310and 1320. For example, the voltage sensor 1110 may sense a voltagesupplied from the voltage generator 1200 to the cores 1310 and 1320. Insome example embodiments, the voltage sensor 1110 may sense a voltagetransferred within each of the cores 1310 and 1320. The voltage sensor1110 may generate a signal indicating a level of the sensed voltage. Thevoltage sensor 1110 may output the generated signal to the cores 1310and 1320.

The temperature sensor 1120 may sense a temperature of the cores 1310and 1320. For example, the temperature sensor 1120 may sense a surfacetemperature of a semiconductor chip implementing the cores 1310 and1320. In some example embodiments, the temperature sensor 1120 may sensean internal temperature of the cores 1310 and 1320. The temperaturesensor 1120 may generate a signal indicating a temperature value of thesensed temperature. The temperature sensor 1120 may output the generatedsignal to the cores 1310 and 1320.

The frequency sensor 1130 may sense an operating frequency of each ofthe cores 1310 and 1320. For example, the cores 1310 and 1320 mayoperate based on a clock received from a clock generator outside theprocessor 1000. The frequency sensor 1130 may sense a frequency of aclock supplied to each of the cores 1310 and 1320. The frequency sensor1130 may generate a signal indicating an operating frequency value ofthe sensed operating frequency. The frequency sensor 1130 may output thegenerated signal to the cores 1310 and 1320.

As such, the sensor 1100 may be used to collect information about acondition or parameter capable of having an influence on the degree ofdegradation and lifetime of the cores 1310 and the degree of degradationand lifetime of the core 1320. The sensor 1100 is not limited to thedescription given with reference to FIG. 3, and may be variously changedor modified to measure or sense values of any other conditions orparameters which may have an influence on the degree of degradation andlifetime of the core 1310 and the degree of degradation and lifetime ofthe core 1320.

FIG. 4 is a flowchart illustrating example operations of a processor ofFIG. 2.

In operation S110, the processor 1000 may sense the degree ofdegradation of the core 1310 and the degree of degradation of the core1320. The processor 1000 may predict the degree of degradation of thecore 1310 and the degree of degradation of the core 1320 based onvarious algorithms. For the prediction, the processor 1000 may calculatethe degree of degradation of the core 1310 and the degree of degradationof the core 1320 based on parameter values obtained from the sensor1100. For example, the processor 1000 may multiply one or more weights(e.g., values set by the designer or determined empirically) and theobtained parameter values together, and calculate the degree ofdegradation based on values obtained by the multiplication.

For example, as described above, values of an operating voltage, atemperature, and/or an operating frequency associated with each of thecores 1310 and 1320 may be obtained by the sensor 1100. For example, analgorithm for predicting the degree of degradation may be expressed by afunction having various variables associated with an operating voltage,a temperature, an operating frequency, and/or the like. To predict thedegree of degradation of the core 1310 and the degree of degradation ofthe core 1320, the processor 1000 may calculate a function value basedon values of an operating voltage, a temperature, an operatingfrequency, and/or any other parameter, by using the algorithm. Thecalculated function value may indicate the degree of degradation, whichis predicted with respect to each of the cores 1310 and 1320.

In operation S120, the processor 1000 may calibrate the degree ofdegradation calculated in operation S110. For example, the processor1000 may calculate the new degree of degradation of the core 1310 andthe new degree of degradation of the core 1320 based on minimumoperating levels of the cores 1310 and 1320. The processor 1000 mayreplace the degree of degradation of each of the cores 1310 and 1320calculated in operation S110 with the degree of degradation of each ofthe cores 1310 and 1320 calibrated in operation S120. In some exampleembodiments, the processor 1000 may calculate the new degree ofdegradation of each of the cores 1310 and 1320 by combining the degreeof degradation of each of the cores 1310 and 1320 calculated inoperation S110 and the new degree of degradation of each of the cores1310 and 1320 calculated in operation S120, based on various equations.

The degree of degradation of each of the cores 1310 and 1320 calculatedin operation S110 is a prediction value (e.g., the predicted degree ofdegradation) based on parameter values associated with the degree ofdegradation and lifetime of each of the cores 1310 and 1320, whereas thedegree of degradation of each of the cores 1310 and 1320 calibrated inoperation S120 reflects an experimental value associated with minimum(or threshold) operating level of each of the cores 1310 and 1320.Accordingly, as the degree of degradation of each of the cores 1310 and1320 calculated in operation S110 is calibrated through operation S120,the processor 1000 may obtain the degree of degradation of the core 1310and the degree of degradation of the core 1320 more accurately.

In operation S130, the processor 1000 may perform operations formanaging the degree of degradation of the core 1310 and the degree ofdegradation of the core 1320 based on the degree of degradation of eachof the cores 1310 and 1320 calibrated in operation S120. For example,the processor 1000 may perform operations for balancing the degree ofdegradation of the core 1310 and the degree of degradation of the core1320.

Operation S110 to operation S130 may be repeatedly performed dependingon various patterns. For example, operations S110 to operation S130 maybe performed at a given period. In some example embodiments, operationsS110 to operation S130 may be performed at a time point when anoperation of the electronic device 100 starts (e.g., when the electronicdevice 100 is turned on) and at a time point when the operation of theelectronic device 100 ends (e.g., when the electronic device 100 isturned off). In some example embodiments, operation S110 to operationS130 may be performed with respect to a core that is in an idle state.Below, an example embodiment of each of operations S110 to operationS130 will be more fully described with reference to FIG. 5.

FIG. 5 is a flowchart illustrating example operations included in eachoperation of FIG. 4.

Referring to FIG. 5, operation S110 of FIG. 4 may include operation S111and operation S112 of FIG. 5. Operation S120 of FIG. 4 may includeoperation S121 and operation S122 of FIG. 5. Operation S130 of FIG. 4may include operation S131 of FIG. 5.

For example, before operation S111, the sensor 1100 may monitor thecores 1310 and 1320 in real time to obtain parameter values associatedwith the degree of degradation and lifetime of the core 1310 and thedegree of degradation and lifetime of the core 1320. The sensor 1100 maystore the parameter values obtained in real time in a memory positionedinside/outside the processor 1000.

In operation S111, the cores 1310 and 1320 may request the parametervalues of each of the cores 1310 and 1320 from the sensor 1100. Thesensor 1100 may provide the parameter values in response to the requestof the cores 1310 and 1320. For example, the sensor 1100 may provide thecores 1310 and 1320 with the parameter values which are obtained in realtime and are stored in the memory. The cores 1310 and 1320 may obtainthe parameter values provided from the sensor 1100. For example, thecores 1310 and 1320 may obtain a temperature value, a level of anoperating voltage, and/or an operating frequency value of each of thecores 1310 and 1320.

In operation S112, the cores 1310 and 1320 may calculate the degree ofdegradation of the core 1310 and the degree of degradation of the core1320 based on the parameter values obtained in operation S111. Each ofthe cores 1310 and 1320 may calculate the degree of degradationdepending on various algorithms. For example, in the case where aninternal temperature of the cores 1310 and 1320 is high (e.g., in thecase where the obtained temperature value is greater than a referencetemperature value), the calculated degree of degradation of each of thecores 1310 and 1320 may be high (e.g., the calculated degree ofdegradation may be greater than a threshold degree of degradation). Inthe case where the cores 1310 and 1320 operate based on an operatingvoltage of a high level (e.g., in the case where the obtained level ofthe operating voltage is high), the calculated degree of degradation ofeach of the cores 1310 and 1320 may be high (e.g., the calculated degreeof degradation may be greater than a threshold degree of degradation).In the case where the cores 1310 and 1320 operate based on a highoperating frequency (e.g., in the case where the obtained operatingfrequency value is greater than a reference frequency value), thecalculated degree of degradation of each of the cores 1310 and 1320 maybe high (e.g., the calculated degree of degradation may be greater thana threshold degree of degradation).

In operation S121, the sensor 1100 may measure a minimum operating levelof the core 1310 and a minimum operating level of the core 1320. Thesensor 1100 may measure the minimum operating level of the core 1310 andthe minimum operating level of the core 1320 based on various methods.For example, the sensor 1100 may measure the minimum operating level ina state where the sensor 1100 controls the voltage generator 1200 suchthat a level of a voltage supplied to a core (e.g., the first core 1310or the second core 1320), which is in an idle state, gradually (orstepwise) decreases. An example method for measuring a minimum operatinglevel will be described with reference to FIG. 6.

In operation S122, each of the cores 1310 and 1320 may calibrate thedegree of degradation calculated in operation S112 based on the minimumoperating level measured in operation S121. For example, each of thecores 1310 and 1320 may calculate the degree of degradation forcalibration based on the minimum operating level measured in operationS121. Each of the cores 1310 and 1320 may calculate the new degree ofdegradation based on the degree of degradation calculated in operationS112 and the degree of degradation for calibration. For example, each ofthe cores 1310 and 1320 may calculate the new degree of degradation bycombining values which are obtained based on (e.g., by multiplying) oneor more weights (e.g., values set by the designer or determinedempirically), and one or more the degree of degradation valuescalculated in operation S112, and one or more the degree of degradationvalues for calibration together. In some example embodiments, each ofthe cores 1310 and 1320 may replace the degree of degradation calculatedin operation S112 with the degree of degradation for calibration.

In operation S131, a scheduler may schedule tasks that are to beassigned to the cores 1310 and 1320 based on the degree of degradationcalibrated in operation S122. For example, the scheduler may firstassign tasks to a core, of which the degree of degradation is relativelylower, from among the cores 1310 and 1320. Some examples of schedulingassociated with tasks of the cores 1310 and 1320 will be described withreference to FIGS. 9 to 11.

For better understanding, a description is given as operation S121 isperformed after operation S111 and operation S112, but operation S121may be performed at any time point before operation S122 is performed.

FIG. 6 is a diagram illustrating graphs associated with an examplemethod for measuring minimum operating levels of cores of FIG. 2. In anupper graph of FIG. 6, an x-axis represents a time, and a y-axisrepresent an operating voltage of the first core 1310 (e.g., a voltagesupplied from the voltage generator 1200 of FIG. 2 to the first core1310). In a lower graph of FIG. 6, an x-axis represents a time, and ay-axis represent an operating voltage of the second core 1320 (e.g., avoltage supplied from the voltage generator 1200 of FIG. 2 to the secondcore 1320).

An example method for measuring a minimum operating level of a corebeing in an idle state among the cores 1310 and 1320 will be describedwith reference to FIG. 6, but the inventive concepts are not limitedthereto. For example, as described with reference to FIG. 4, minimumoperating levels of the cores 1310 and 1320 may be measured at varioustime points including time points when a power of the processor 1000 isturned on and/or off. For example, the minimum operating levels may bemeasured by various methods including a method in which the minimumoperating levels of the cores 1310 and 1320 are directly measured by aseparate sensor included in the processor 1000.

In the example of FIG. 6, the first core 1310 may be in an idle state ina time duration TD1, and the second core 1320 may be in an idle state ina time duration TD2. Before minimum operating levels are measured, alevel of an operating voltage of the first core 1310 may be “V1”, and alevel of an operating voltage of the second core 1320 may be “V2”. Forexample, “V1” and “V2” may be determined in consideration of thereference performance of the cores 1310 and 1320, respectively. Forexample, “V1” and “V2” may be values which are sufficiently greater thanexpected minimum operating levels (e.g., minimum operating levelspredicted based on the degree of degradation calculated in operationS111 and operation S112 of FIG. 5). In some example embodiments, “V1”and “V2” may be determined in consideration of the degree of degradationpredicted with respect to each of the cores 1310 and 1320 in operationS110 of FIG. 4.

In the first time duration TD1, the minimum operating level of the firstcore 1310 may be measured. For example, under control of the sensor1100, the voltage generator 1200 may decrease a level of a voltageprovided to the first core 1310. For example, the voltage generator 1200may decrease the level of the voltage in a stepwise form, but theinventive concepts are not limited thereto.

For example, a level of an operating voltage provided to the first core1310 may stepwise decrease from “V1”. Whenever the level of theoperating voltage decreases, whether the first core 1310 operatesnormally may be tested with regard to each level of the operatingvoltage. For example, an operation of the first core 1310 may be testedthrough a scenario-based benchmarking test. For example, during thetest, the operations of the first core 1310 are variously monitored andtested as to whether an intended (or desired) performance of the firstcore 1310 is obtained or whether an error or a disorder is occurred.

When the level of the operating voltage provided to the first core 1310is not less than the minimum operating level, the first core 1310 maypass the test. In contrast, when the level of the operating voltageprovided to the first core 1310 is less than the minimum operatinglevel, the first core 1310 may not pass the test. Accordingly, the testof the first core 1310 may be performed to measure the minimum operatinglevel. For example, the minimum operating level of the operating voltageof the first core 1310 may be measured to be “LVcc1”.

In this case, the first core 1310 may operate normally based on avoltage having a level of “LVcc1” or more. In the case where the firstcore 1310 operates normally, the first core 1310 may transmit a signalindicating that an operation is performed normally to the sensor 1100.The sensor 1100 may measure the level of the operating voltage of thefirst core 1310 in response to the received signal.

The first core 1310 may not operate normally if a level of the voltageis less than “LVcc1”. Accordingly, since the signal indicating that theoperation is performed normally may not be input from the first core1310 to the sensor 1100, and the sensor 1100 may determine the “LVcc1”,which corresponds to a level of an operating voltage most recentlymeasured, as the minimum operating level of the first core 1310. Thefirst core 1310 may obtain the “LVcc1” being the minimum operating levelthrough the sensor 1100.

For example, testing the first core 1310 for the purpose of measuringthe minimum operating level may have an influence on operations of thefirst core 1310 (e.g., may make the performance of the first core 1310low). Accordingly, the test may be performed at a time (e.g., an idletime or a power on/off time) when an influence on the operations of thefirst core 1310 is minimized.

In the second time duration TD2, the minimum operating level of thesecond core 1320 may be measured. For example, under control of thesensor 1100, the voltage generator 1200 may stepwise decrease a level ofa voltage provided to the second core 1320. For example, the voltagegenerator 1200 may decrease the level of the voltage in a stepwise form,but the inventive concepts are not limited thereto. As the level of thevoltage varies, the second core 1320 may be tested identically orsubstantially similarly to the test of the first core 1310.

The second core 1320 may operate normally based on a voltage having alevel of “LVcc2” or more. In the case where the second core 1320operates normally, the second core 1320 may transmit a signal indicatingthat an operation is performed normally to the sensor 1100. The sensor1100 may measure a level of the operating voltage of the second core1320 in response to the received signal.

The second core 1320 may not operate normally if a level of the voltageis less than “LVcc2”. Accordingly, the signal indicating that anoperation is performed normally may not be input from the second core1320 to the sensor 1100, and the sensor 1100 may determine the “LVcc2”,which corresponds to a level of an operating voltage most recentlymeasured, as the minimum operating level of the second core 1320. Thesecond core 1320 may obtain the “LVcc2” being the minimum operatinglevel through the sensor 1100.

FIGS. 7 and 8 are graphs illustrating minimum operating levels measuredby operations of FIG. 6. The minimum operating level of the first core1310 will be described with reference to FIGS. 7 and 8. The way tomeasure the minimum operating level of the second core 1320 is the sameas or substantially similar to the way to measure the minimum operatinglevel of the first core 1310. Thus, a description associated with theway to measure the minimum operating level of the second core 1320 willbe omitted.

In graphs of FIGS. 7 and 8, an x-axis represents an operating frequencyvalue of the first core 1310, and a y-axis represents an operatingvoltage of the first core 1310 provided from the voltage generator 1200of FIG. 2. In the graphs of FIGS. 7 and 8, shaded boxes indicate thatthe first core 1310 does not operate normally (“Fail”), and white boxesindicate that the first core 1310 operates normally (“Pass”).

The minimum operating level of the first core 1310 may be measured foreach operating frequency of the first core 1310. For example, theoperating frequency of the first core 1310 may be a frequency of a clocksupplied from a clock generator to the first core 1310. For example, inthe case where the first core 1310 operates based on a high operatingfrequency, the first core 1310 may process more tasks within aparticular time duration. For the first core 1310 to process more tasks,the first core 1310 may consumes more power. Accordingly, as theoperating frequency of the first core 1310 becomes higher, the minimumoperating level of the first core 1310 may become higher.

For example, the minimum operating level of the first core 1310 may be“V1” in a “F1” band, and the minimum operating level of the first core1310 may be “V2” in a “F2” band. The “F2” band may be higher than the“F1” band, and “V2” may be greater than “V1”.

After the minimum operating level of the first core 1310 is measured asillustrated in FIG. 7, the first core 1310 may process various tasks. Asthe first core 1310 operates to process tasks, the degree of degradationof the first core 1310 may increase. The minimum operating level of thefirst core 1310 having the increased degree of degradation may bemeasured again. The graph of FIG. 8 may be a graph illustrating theminimum operating level of the first core 1310 measured again afterobtaining the graph of FIG. 7.

Referring to FIG. 8, in the “F1” band, the first core 1310 may notoperate normally based on a voltage of “V1”. The first core 1310 mayoperate normally based on a voltage of “V2” or more. Accordingly, theminimum operating level of the first core 1310 may be “V2”. Referring toFIGS. 7 and 8, the minimum operating level of the first core 1310 mayincrease from “V1” to “V2” in the “F1” band. Further, referring to FIG.8, the minimum operating level of the first core 1310 may increase from“V2” to “V3” in the “F2” band.

Afterwards, operation S122 and operation S131 of FIG. 5 may be performedbased on the measured minimum operating levels “V2” and “V3”. Theactually measured minimum operating levels may be used to compensate orcalibrate the degree of degradation predicted in operation S110 of FIG.4. Because “V2” and “V3” are actually measured minimum operating levels,in the case where “V2” and “V3” are applied to the degree of degradationof the core 1310 and the degree of degradation of the core 1320 (e.g.,in the case where the degree of degradation of the core 1310 and thedegree of degradation of the core 1320 calculated in operation S112 arecalibrated based on “V2” and “V3”), each of the cores 1310 and 1320 mayobtain the accurate degree of degradation.

FIG. 9 is a diagram illustrating graphs for describing the degree ofdegradation of each core of FIG. 2. FIGS. 10 and 11 are conceptualdiagrams illustrating example operations for assigning tasks to cores ofFIG. 2. As described with reference to FIG. 5, the processor 1000 mayinclude a scheduler 20 for scheduling tasks assigned to the cores 1310and 1320. Example operations of the scheduler 20 for scheduling tasksassigned to the cores 1310 and 1320 based on the degree of degradationof the core 1310 and the degree of degradation of the core 1320 will bedescribed with reference to FIGS. 9 to 11.

In graphs of FIG. 9, an x-axis represents a time, and a y-axisrepresents the degree of degradation “Vms_1” of the first core 1310 andthe degree of degradation “Vms_2” of the second core 1320, respectively.The cores 1310 and 1320 may obtain the degree of degradation “Vms_1” andthe degree of degradation “Vms_2” through operation S111, operationS112, operation S121, and operation S122 of FIG. 5, respectively. In theexamples of FIGS. 10 and 11, each bar graph illustrated in the cores1310 and 1320 indicates the degree of degradation of each of the cores1310 and 1320. In an area of the bar graph, a shaded portion maycorrespond to a magnitude of the degree of degradation.

Referring to FIG. 9, before a time point “t1”, the degree of degradationof the first core 1310 may be “V1”, and the degree of degradation of thesecond core 1320 may be “V3,” which is greater than “V1”. Because thedegree of degradation of the first core 1310 is less than the degree ofdegradation of the second core 1320, the scheduler 20 may assign tasksto the first core 1310.

For example, referring to FIG. 10, at the time point “t1”, the scheduler20 may assign a task “T1” and a task “T2” to the first core 1310 havingthe degree of degradation of “V1”. In a time duration Ts1 between thetime point “t1” and a time point “t2”, the task “T1” and the task “T2”may be performed by the first core 1310. As the first core 1310processes the assigned tasks, the degree of degradation of the firstcore 1310 may increase. Accordingly, at the time point “t2”, the degreeof degradation of the first core 1310 may increase from “V1” to “V2”.

Referring to FIG. 9, from the time point “t2” to a time point “t3”, thedegree of degradation of the first core 1310 may be “V2”, and the degreeof degradation of the second core 1320 may be “V3,” which is less than“V2”. Because the degree of degradation of the second core 1320 is lessthan the degree of degradation of the first core 1310, the scheduler 20may assign tasks to the second core 1320.

Referring to FIG. 11, at the time point “t3”, the scheduler 20 mayassign a task “T3” and a task “T4” to the second core 1320 having thedegree of degradation of “V3”. In a time duration Ts2 between the timepoint “t3” and a time point “t4”, the task “T3” and the task “T4” may beperformed by the second core 1320. As the second core 1320 processes theassigned tasks, the degree of degradation of the second core 1320 mayincrease. Accordingly, at the time point “t4”, the degree of degradationof the second core 1320 may increase from “V3” to “V4”.

Referring to FIG. 9, from the time point “t4” to a time point “t5”, thedegree of degradation of the first core 1310 may be “V2”, and the degreeof degradation of the second core 1320 may be “V4,” which is less than“V2”. Because the degree of degradation of the first core 1310 isgreater than the degree of degradation of the second core 1320, thescheduler 20 may assign tasks to the second core 1320. For example, thescheduler 20 may assign tasks to the second core 1320 as illustrated inFIG. 11. As the second core 1320 processes the assigned tasks during atime duration Ts3, the degree of degradation of the second core 1320 mayincrease. Accordingly, at a time point “t6”, the degree of degradationof the second core 1320 may increase from “V4” to “V5”.

Referring to FIG. 9, from the time point “t6” to a time point “t7”, thedegree of degradation of the first core 1310 may be “V2”, and the degreeof degradation of the second core 1320 may be “V5,” which is greaterthan “V2”. Because the degree of degradation of the first core 1310 isless than the degree of degradation of the second core 1320, thescheduler 20 may assign tasks to the first core 1310. For example, thescheduler 20 may assign tasks to the first core 1310 as illustrated inFIG. 10. As the first core 1310 processes the assigned tasks during atime duration Ts4, the degree of degradation of the first core 1310 mayincrease. Accordingly, at the time point “t8”, the degree of degradationof the first core 1310 may increase from “V2” to “V5”.

As the scheduler 20 assigns tasks to a core, of which the degree ofdegradation is relatively low, from among the cores 1310 and 1320 fromthe time point “t1” to an eighth time point “t8”, the degree ofdegradation of the core 1310 and the degree of degradation of the core1320 may be balanced to, for example, “V5”. That is, the degree ofdegradation of the core 1310 and the degree of degradation of the core1320 may become the same or substantially similar to each other throughthe scheduling considering the degree of degradation. An examplescheduling based on the degree of degradation is described withreference to FIGS. 9 to 11, but the inventive concepts are not limitedthereto. For example, it may be well understood that the inventiveconcepts may perform various operations for balancing the degree ofdegradation of the core 1310 and the degree of degradation of the core1320.

FIG. 12 is a diagram illustrating a lifetime of a processor configuredto perform operations of FIGS. 9 to 11 and a lifetime of a processor notconfigured to perform operations of FIGS. 9 to 11.

In an example of FIG. 12, an x-axis represents a time, and a y-axisrepresents the degree of degradation “Vms” of a core included in theprocessor 1000. FIG. 12 shows the degree of degradation curvesassociated with the greatest degree of degradation of the core 1310included in the processor 1000 and the greatest degree of degradation ofthe core 1320 included in the processor 1000. It is assumed that a corehaving the degree of degradation greater than a threshold value “Vth”does not operate normally. For example, an operating speed of a corehaving the degree of degradation greater than the threshold value “Vth”may be lower than an operating speed desired by the user. Accordingly, atime length from a time point “t0” when the processor 1000 starts anoperation for the first time to a time point when the degree ofdegradation of the processor 1000 reaches the threshold value “Vth” maybe referred to as a lifetime of the processor 1000.

In the case where the degree of degradation of one of the cores 1310 and1320 included in the processor 1000 is greater than “Vth”, the processor1000 may not operate normally. In the case where scheduling is performedwithout considering the degree of degradation of the core 1310 and thedegree of degradation of the core 1320, tasks could be continuouslyassigned to a core, of which the degree of degradation is relativelyhigher, from among the cores 1310 and 1320. Accordingly, the degree ofdegradation of one of the cores 1310 and 1320 may reach the thresholdvalue “Vth” at a relatively early time point “LT1”, and the overalllifetime of the processor 1000 may become shorter (refer to analternated long and short dash line).

In the case where scheduling is performed in consideration of the degreeof degradation of the core 1310 and the degree of degradation of thecore 1320, tasks may be assigned to a core, of which the degree ofdegradation is relatively lower, from among the cores 1310 and 1320, asdescribed with reference to FIGS. 9 to 11. Accordingly, the degree ofdegradation of the cores 1310 and the degree of degradation of the core1320 may be balanced, and the degree of deterioration of one of thecores 1310 and 1320 may reach the threshold value “Vth” at a relativelylate time point “LT2” (refer to a solid line). That is, the lifetime ofthe processor 1000 may become longer by performing scheduling inconsideration of the degree of degradation of the core 1310 and thedegree of degradation of the core 1320.

FIG. 13 is a block diagram illustrating an electronic device configuredto manage the degree of degradation of storage, according to an exampleembodiment of the inventive concepts.

An electronic device 2000 may include a host 2100, a storage 2200 and asensor (or a sensor circuit) 2300. As described with reference to FIG.1, the processor 121 may access the storage 123 for the purpose ofmanaging the degree of degradation of the storage 123. In an example ofFIG. 13, the host 2100 may access the storage 2200. Thus, the host 2100of FIG. 13 may correspond to the processor 121 of FIG. 1. The host 2100may execute software 30 corresponding to the software 10 of FIG. 1. Thestorage 2200 may be configured to store data or output the stored data.For example, the storage 2200 of FIG. 13 may correspond to the storage123 or the memory 122 of FIG. 1.

The host 2100 may exchange data DAT with the storage 2200. The storage2200 may provide a storage service for the host 2100 in response to acommand CMD received from the host 2100. The host 2100 may exchange anaddress ADDR associated with memory areas in memory devices 2221 to 2223with the storage 2200.

For example, the host 2100 may provide the command CMD including a writerequest and the data DAT including write data to the storage 2200. Thestorage 2200 may store requested write data to the memory devices 2221to 2223 in response to the write request. For example, the host 2100 mayprovide the command CMD including a read request to the storage 2200.The storage 2200 may output requested read data from the memory devices2221 to 2223 to the host 2100 in response to the read request.

Each of the memory devices 2221 to 2223 may store or output datarequested by the host 2100. Each of the memory devices 2221 to 2223 mayinclude a memory area for storing data. Write data may be stored to amemory area directed by the address ADDR, and read data may be outputfrom a memory area directed by the address ADDR.

Due to iterative operations in which data are stored to the memorydevices 2221 to 2223 and data stored in the memory devices 2221 to 2223are erased, the degree of degradation of each of the memory devices 2221to 2223 may increase. For example, a memory area of each of the memorydevices 2221 and 2223 may include a plurality of memory cells. Thememory cells may include a semiconductor element for storing data. As avoltage is repeatedly applied to a semiconductor element, the degree ofdegradation of the semiconductor element may increase. For example,insulating layers of the memory cells may be broken down or maydeteriorate.

The host 2100 may execute the software 30 for managing the degree ofdegradation of each of the memory devices 2221 to 2223. The host 2100may perform operations the same as or substantially similar to theoperations described with reference to FIG. 4 for the purpose ofmanaging the degree of degradation of each of the memory devices 2221 to2223.

For example, in operation S110, the host 2100 may obtain parametervalues indicating a factor(s) having an influence on the degree ofdegradation of each of the memory devices 2221 to 2223 from the memorydevices 2221 to 2223. The host 2100 may calculate the degree ofdegradation of each of the memory devices 2221 to 2223 based on theobtained parameter values.

In operation S120, the host 2100 may measure levels of voltages suppliedto the memory devices 2221 to 2223. In some example embodiments, thehost 2100 may measure levels of voltages (e.g., a program voltage or apass voltage) that are generated within the memory devices 2221 to 2223.The host 2100 may calibrate the degrees of degradation calculated inoperation S110 based on the measured levels of the voltages.

In operation S130, the host 2100 may perform various operations based onthe degree of degradation of each of the memory devices 2221 to 2223.Each of the memory devices 2221 to 2223 may perform any other operationbased on the degree of degradation, instead of an operation which hasbeen performed. For example, the memory devices 2221 to 2223 may changelevels of generated program and pass voltages.

In some example embodiments, the host 2100 may balance the memorydevices 2221 to 2223 in the degree of degradation, and thus, thelifetimes of the memory devices 2221 to 2223 may increase. For example,in the case where the degree of degradation of each of the memorydevices 2221 to 2223 increases, the reliability of the memory devices2221 to 2223 may decrease. In some example embodiments, in the casewhere the degree of degradation of each of the memory devices 2221 to2223 increases to a threshold value or more, the host 2100 may provide anotification associated with the reliability of the memory devices 2221to 2223 to the user of the electronic device 2000.

A storage controller 2210 may control overall operations of the storage2200. The storage controller 2210 may control the memory devices 2221 to2223 to allow the memory devices 2221 to 2223 to store or output data.

The sensor 2300 may correspond to the sensor 1100 of FIG. 2. The sensor2300 may sense a temperature, an operating voltage, and/or an operatingfrequency of a target circuit.

The host 2100 may include a control circuit (not shown). For example,the control circuit may be configured to obtain a degree of degradationof each of the memory devices 2221 to 2223 (e.g. a semiconductor chip)based on a parameter value and an operating level, the parameter valuebeing associated with a lifetime of each of the memory devices 2221 to2223, the operating level being associated with a reference performanceof each of the memory devices 2221 to 2223, control one of the memorydevices 2221 to 2223 to perform a first operation, and start a secondoperation of the one of the memory devices 2221 to 2223, which has beencontrolled to perform the first operation, based on the obtained degreeof degradation.

FIG. 14 is a conceptual diagram illustrating a vehicle including anelectronic device of FIG. 1.

A vehicle 3000 may include a processor 3100, a storage 3200, acommunication circuitry 3300, a GPS 3400, and a detector 3500. Thevehicle 3000 may not include one or more of the components illustratedin FIG. 14. The vehicle 3000 may include one or more components notillustrated in FIG. 14.

The processor 3100 may correspond to the processor 1000 of FIG. 1, theprocessor 1000 of FIG. 2, or the host 2100 of FIG. 13. The processor3100 may control overall operations of the components included in thevehicle 3000.

For example, the processor 3100 may communicate with an externalelectronic device, any other vehicle, and a system through thecommunication circuitry 3300. The processor 3100 may obtain informationabout a position of the vehicle 3000 based on a signal received from theGPS 3400. The processor 3100 may obtain information about an ambientenvironment of the vehicle 3000 based on a signal received from thedetector 3500.

For example, the processor 3100 may operate as an electronic controlunit (ECU) of the vehicle 3000. To control a movement of the vehicle3000, the processor 3100 may operate as an anti-lock braking system(ABS), a traction control system (TCS), a vehicle dynamic control (VDC),and/or a tire pressure monitoring system (TPMS). The processor 3100 maycontrol an operation of the vehicle 3000 based on data provided from anair flow sensor (AFS), a throttle position sensor (TPS), an airtemperature sensor (ATS), a barometric pressure sensor (BPS), a crankangle sensor (CAS), and/or an idle speed controller (ISC).

The processor 3100 may perform operations associated with the degree ofdegradation of each component of the vehicle 3000. For example, theprocessor 3100 may perform operations for balancing cores included inthe processor 3100 in the degree of degradation. In some exampleembodiments, the processor 3100 may access the storage 3200 to performoperations associated with the degree of degradation of the storage3200. The processor 3100 may be configured identically or substantiallysimilar to those described with reference to FIGS. 1 to 13, and thus,additional description will be omitted to avoid redundancy.

The storage 3200 may include the storage 2200 of FIG. 13. The storage3200 may store data processed or to be processed by the processor 3100.For example, the storage 3200 may store data associated with a movement,stability, and a position of the vehicle 3000 and an ambient environmentof the vehicle 3000. The degree of degradation of the storage 3200 maybe calculated by the processor 3100. To this end, the minimum operatinglevel of the storage 3200 may be measured by the processor 3100. Anexample configuration and example operations of the storage 3200 aredescribed with reference to FIG. 13, and thus, additional descriptionwill be omitted to avoid redundancy.

The communication circuitry 3300 may communicate with an externalelectronic device of the vehicle 3000, any other vehicle, and a systembased on various protocols. The communication circuitry 3300 may includetransmission circuitry (not shown) and reception circuitry (not shown).The GPS 3400 may receive a signal associated with a position of thevehicle 3000 from a satellite. The GPS 3400 may generate a signalindicating position information of the vehicle 3000 based on thereceived signal. The detector 3500 may include devices for obtaininginformation about an ambient environment of the vehicle 3000. Forexample, the detector 3500 may include a RADAR (RAdio Detection AndRanging), a LIDAR (LIght Detection And Ranging), an infrared sensor,and/or an imaging device.

The processors and various circuitries included in the exampleembodiments described herein may include processing circuitry such ashardware including logic circuits, a hardware/software combination suchas a processor executing software, or a combination thereof. Forexample, the processing circuitry more specifically may include, but isnot limited to, a central processing unit (CPU), an arithmetic logicunit (ALU), a digital signal processor, a microcomputer, a fieldprogrammable gate array (FPGA), a System-on-Chip (SoC), a programmablelogic unit, a microprocessor, application-specific integrated circuit(ASIC), etc.

According to an example embodiment of the inventive concepts, the degreeof degradation of a semiconductor chip may be accurately calculated, andthe lifetime of the semiconductor chip may increase.

While the inventive concepts have been described with reference to someexample embodiments thereof, it will be apparent to those of ordinaryskill in the art that various changes and modifications may be madethereto without departing from the spirit and scope of the inventiveconcepts as set forth in the following claims.

What is claimed is:
 1. An electronic device comprising: a processorconfigured to, obtain a first degree of degradation of a first corebased on a first parameter value and a first operating level, the firstparameter value being associated with a first lifetime of the firstcore, the first operating level being associated with a first operationof the first core, obtain a second degree of degradation of a secondcore based on a second parameter value and a second operating level, thesecond parameter value being associated with a second lifetime of thesecond core, the second operating level being associated with a secondoperation of the second core, and schedule a task with respect to thefirst core and the second core based on the first degree of degradationand the second degree of degradation; and a sensor configured to providethe first parameter value and the first operating level to the firstcore, and the second parameter value and the second operating level tothe second core, wherein the first operating level is a first minimumlevel of a first operating voltage for operating the first core with afirst reference performance, and the second operating level is a secondminimum level of a second operating voltage for operating the secondcore with a second reference performance.
 2. The electronic device ofclaim 1, wherein the first parameter value is associated with at leastone of the first operating voltage, a temperature of the first core, oran operating frequency of the first core.
 3. The electronic device ofclaim 1, wherein the first reference performance is associated with thefirst lifetime of the first core and a first operating speed of thefirst core, and the second reference performance is associated with thesecond lifetime of the second core and a second operating speed of thesecond core.
 4. The electronic device of claim 1, wherein the processoris further configured to: assign the task to the first core when thefirst degree of degradation is less than the second degree ofdegradation; and assign the task to the second core when the seconddegree of degradation is less than the first degree of degradation. 5.The electronic device of claim 1, wherein the processor is furtherconfigured to calculate a predicted degree of degradation of the firstcore based on the first parameter value.
 6. The electronic device ofclaim 5, wherein the sensor is further configured to measure the firstoperating level, and the processor is further configured to obtain thefirst degree of degradation by calibrating the predicted degree ofdegradation based on the first operating level.
 7. The electronic deviceof claim 1, further comprising: a voltage generator configured togenerate the first operating voltage and the second operating voltage.8. The electronic device of claim 7, wherein the sensor is furtherconfigured to measure the first operating level by controlling thevoltage generator such that a level of the first operating voltage isadjusted.
 9. The electronic device of claim 1, wherein the sensor isfurther configured to measure the first operating level when the firstcore is in an idle state.
 10. The electronic device of claim 1, whereinthe first degree of degradation is associated with an increment of thefirst operating level due to the operation of the first core.
 11. Anelectronic device may include: a processor configured to determine anoperating level, and a target core, to which a task is to be assigned,based on a parameter value associated with a lifetime, the operatinglevel being associated with a reference performance, a voltage generatorconfigured to supply an operating voltage to the processor, and a sensorconfigured to provide the parameter value to the processor, to measurean operating level of the operating voltage supplied to the processor,and to provide the measured operating level to the processor. Theoperating level may be a minimum level of the operating voltage foroperating the processor with the reference performance.
 12. Theelectronic device of claim 11, wherein the processor is furtherconfigured to: calibrate a degree of degradation of the target core,which is calculated based on the parameter value, based on the measuredoperating level; and determine the target core based on the calibrateddegree of degradation.
 13. The electronic device of claim 12, whereinthe calibrated degree of degradation is associated with an increment ofthe operating level due to an operation of the processor.
 14. Theelectronic device of claim 11, wherein the processor is furtherconfigured to: calculate a degree of degradation of cores including thetarget core based on the measured operating level and the parametervalue; and assign the task to the target core having a lowest one of thecalculated degrees of degradation.
 15. The electronic device of claim14, wherein the sensor is configured to measure the operating level ofthe target core when the target core is in an idle state among thecores.
 16. An electronic device comprising: a control circuit configuredto, obtain a degree of degradation of a semiconductor chip based on aparameter value and an operating level, the parameter value beingassociated with a lifetime of the semiconductor chip, the operatinglevel being associated with a reference performance of the semiconductorchip, control the semiconductor chip to perform a first operation, andstart a second operation of the semiconductor chip, which has beencontrolled to perform the first operation, based on the obtained degreeof degradation; and a sensor configured to provide the parameter valueand the operating level to the semiconductor chip, wherein the operatinglevel is a minimum level of an operating voltage for operating thesemiconductor chip with the reference performance.
 17. The electronicdevice of claim 16, wherein the semiconductor chip includes a memoryconfigured to store data, and the operating voltage is supplied to amemory area of the memory.
 18. The electronic device of claim 17,wherein a first level of the operating voltage supplied to the memoryarea by the second operation is different from a second level of theoperating voltage supplied to the memory area by the first operation.19. The electronic device of claim 16, wherein the sensor is furtherconfigured to obtain the parameter value in a real time by monitoringthe semiconductor chip, and includes a memory configured to store theparameter value obtained in the real time.
 20. The electronic device ofclaim 19, wherein the sensor is further configured to provide theparameter value stored in the memory to the control circuit in responseto a request of the control circuit.